{"id":15667,"date":"2026-01-06T18:19:34","date_gmt":"2026-01-06T10:19:34","guid":{"rendered":"http:\/\/www.erun-tech.com\/?post_type=dt_portfolio&p=15667"},"modified":"2026-01-06T18:19:34","modified_gmt":"2026-01-06T10:19:34","slug":"diangongjichushicaojueyuanzhashuangjixingjingtiguan-igbt-deshibieyuceliang","status":"publish","type":"dt_portfolio","link":"http:\/\/www.erun-tech.com\/en\/project\/diangongjichushicaojueyuanzhashuangjixingjingtiguan-igbt-deshibieyuceliang","title":{"rendered":"Fundamentals of Electrical Practice: Identification and Measurement of Insulated-Gate Bipolar Transistors (IGBTs)"},"content":{"rendered":"
\n
\n

Fundamentals of Electrical Practice: Identification and Measurement of Insulated-Gate Bipolar Transistors (IGBTs)<\/h1>\n
Fundamental Skills Training in Marine Electronics and Electrical Systems<\/div>\n<\/div>\n
\n

I. Basic Concepts of Insulated-Gate Bipolar Transistors (IGBTs)<\/h2>\n
\n

An insulated-gate bipolar transistor is a MOSFET<\/strong> \u548cBipolar Transistor<\/strong>A composite device with an MOSFET as the input stage and a PNP transistor as the output stage. It combines the advantages of both devices:<\/p>\n

\n
It has both:<\/strong>The advantages of MOSFET devices\u2014low drive power and fast switching speed.<\/div>\n
It also has:<\/strong>The advantages of bipolar devices, which have low saturation voltage and high capacitance.<\/div>\n<\/div>\n

Its frequency characteristics fall between those of a MOSFET and a power transistor, and it can operate normally within a frequency range of several tens of kilohertz. IGBTs are finding increasingly widespread application in modern power electronics and have come to dominate high-frequency, medium- and high-power applications.<\/p>\n

\n

\"417378a10518b00142b8c8b8bd3b7a6a\"\"e5e713ae3413f21913298075cf4bd2a6-1\"<\/p>\n

Figure 12-8<\/b><\/strong>\u00a0Insulated-Gate Bipolar Transistor<\/b><\/strong>IGBT<\/b><\/strong>Symbols and Appearance<\/b><\/strong><\/p>\n<\/div>\n<\/div>\n<\/section>\n

\n

II. Measurement of Insulated-Gate Bipolar Transistors (IGBTs)<\/h2>\n
\n
\n
1. Pin Identification (G, C, E)<\/div>\n
\n

Step 1: Identify the gate (G)<\/strong><\/p>\n

Place the multimeter on R\u00d71k<\/strong> Testing: If the resistance between a particular terminal and the other two terminals is infinite, and remains infinite even after swapping the test leads, then this terminal is determined to beGate (G)<\/strong>\u3002<\/p>\n

Step 2: Identify the collector (C) and the emitter (E)<\/strong><\/p>\n

Measure the other two terminals; if the resistance reads infinite, swap the test leads and measure the resistance again. In the measurement where the resistance is lower:<\/p>\n

    \n
  • \u25cf The red probe is connected to: the collector (C)<\/li>\n
  • \u25cf The black probe is connected to the emitter (E)<\/li>\n<\/ul>\n<\/div>\n<\/div>\n
    \n
    2. Determining Good or Bad (Human Motion Sensor Trigger Experiment)<\/div>\n
    \n

    Using a multimeter R\u00d71k<\/strong> Testing the gear:<\/p>\n

    \n
    (1) Trigger On:<\/strong>
    \nConnect the black probe to C and the red probe to E. Briefly touch both with your finger at the same time.Gate (G)<\/strong> \u548cCollector (C)<\/strong>At this point, the IGBT is triggered to turn on, and the pointer swings toward the lower resistance value.<\/div>\n
    (2) Shutdown blocking:<\/strong>
    \nTouch both at the same time with your fingerGate (G)<\/strong> \u548cEmitter (E)<\/strong>At this point, the IGBT is turned off, and the pointer returns to zero.<\/div>\n<\/div>\n

    If the above steps are completed successfully, you can conclude that the IGBT is in good working order.<\/p>\n<\/div>\n<\/div>\n

    \n

    3. Important Notes (Important)<\/h4>\n
      \n
    • Any analog multimeter can be used to test an IGBT.<\/li>\n
    • Key:<\/strong>When determining whether something is good or bad, be sure to set it to R\u00d71k<\/strong> Gear. This is because the battery voltage in gears below R\u00d71k is too low to trigger IGBT gate turn-on.<\/li>\n
    • This method is also suitable for detectingPower Field-Effect Transistor (P-MOSFET)<\/strong> its quality.<\/li>\n<\/ul>\n<\/div>\n<\/div>\n<\/section>\n