Fundamentals of Electrical Practice: Identification and Measurement of Insulated-Gate Bipolar Transistors (IGBTs)
I. Basic Concepts of Insulated-Gate Bipolar Transistors (IGBTs)
An insulated-gate bipolar transistor is a MOSFET 和Bipolar TransistorA composite device with an MOSFET as the input stage and a PNP transistor as the output stage. It combines the advantages of both devices:
Its frequency characteristics fall between those of a MOSFET and a power transistor, and it can operate normally within a frequency range of several tens of kilohertz. IGBTs are finding increasingly widespread application in modern power electronics and have come to dominate high-frequency, medium- and high-power applications.


Figure 12-8 Insulated-Gate Bipolar TransistorIGBTSymbols and Appearance
II. Measurement of Insulated-Gate Bipolar Transistors (IGBTs)
3. Important Notes (Important)
- Any analog multimeter can be used to test an IGBT.
- Key:When determining whether something is good or bad, be sure to set it to R×1k Gear. This is because the battery voltage in gears below R×1k is too low to trigger IGBT gate turn-on.
- This method is also suitable for detectingPower Field-Effect Transistor (P-MOSFET) its quality.

测量教程:引脚判别、触发导通与好坏检测.jpg)











